OPTICAL SWITCH CONSISTING OF A GALLIUM ALUMINUM ARSENIDE INFRARED LIGHT EMITTING DIODE AND AN NPN SILICON PHOTOTRANSISTOR; LIGHT EMITTING DIODE RATINGS REVERSE VOLTAGE 2.0 V; CURRENT 50.0 MA; POWER DISSIPATION 125.0 MW; PHOTOTRANSISTOR RATINGS COLLECTOR-EMITTER VOLTAGE 50.0 V; POWER DISSIPATION 50.0 MW; OPERATING TEMPERATURE RANGE FROM MINUS 57.0 DEGREE CELSIUS TO PLUS 85.0 DEGREE CELSIUS; 0.610 IN. MAX LG; 0.355 IN. MAX W; 0.260 IN. MAX H