"81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS ""TYPICAL"", ""AVERAGE"", ""NOMINAL"", ETC.)."
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GENERAL CHARACTERISTICS ITEM DESCRIPTION
GALLIUM ARSENIDE DIODE LIGHT SOURCE OPTICALLY COUPLED TO A SILICON NPN PHOTOTRANSISTOR; INFRARED-EMITTING DIODE MAXIMUM RATINGS ARE REVERSE VOLTAGE 2V; FORWARD CURRENT 40MA; PHOTOTRANSISTOR MAXIUM RATINGS ARE; COLLECTOR EMITTER VOLTAGE 35VDC; COLLECTOR BASE VOLTAGE 35VDC; EMITTER BASE VOLTAGE 4VDC; COLLECTOR CURRENT 50MA; TOTAL POWER 300MW; TOTAL DEVICE RATINGS ARE JUNCTION TEMPERATURE M65 TO P125 DEG C; 0.185 IN. MAX LG; 0.370 IN. MAX DIA; COLLECTOR CONNECTED INTERNALLY TO CASE; SIX WIRE LEAD TYPE TERMINALS